发明申请
- 专利标题： METHOD OF TREATING SEMICONDUCTOR ELEMENT
- 专利标题（中）： 处理半导体元件的方法
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申请号： US12865032申请日： 2009-03-02
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公开(公告)号： US20110092016A1公开(公告)日： 2011-04-21
- 发明人: Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
- 申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-056284 20080306
- 国际申请： PCT/JP2009/054355 WO 20090302
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; H01L21/34
摘要：
In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
公开/授权文献
- US08084331B2 Method of treating semiconductor element 公开/授权日：2011-12-27
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