发明申请
- 专利标题： EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STRUCTURE, AND LEAKAGE CURRENT SUPPRESSION METHOD FOR SCHOTTKY JUNCTION STRUCTURE
- 专利标题（中）： 用于半导体器件的外延衬底，肖特基结结构和用于肖特基结结构的漏电流抑制方法
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申请号： US12853685申请日： 2010-08-10
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公开(公告)号： US20110062493A1公开(公告)日： 2011-03-17
- 发明人: Makoto MIYOSHI , Yoshitaka KURAOKA , Shigeaki SUMIYA , Mikiya ICHIMURA , Tomohiko SUGIYAMA , Mitsuhiro TANAKA
- 申请人： Makoto MIYOSHI , Yoshitaka KURAOKA , Shigeaki SUMIYA , Mikiya ICHIMURA , Tomohiko SUGIYAMA , Mitsuhiro TANAKA
- 申请人地址： JP Nagoya-City
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya-City
- 优先权： JP2009-212755 20090915
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/20
摘要：
Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.
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