发明申请
US20110059614A1 Apparatus and Methods for Enhanced Fluid Delivery on Bevel Etch Applications 有权
在锥形蚀刻应用中增强流体输送的装置和方法

  • 专利标题: Apparatus and Methods for Enhanced Fluid Delivery on Bevel Etch Applications
  • 专利标题(中): 在锥形蚀刻应用中增强流体输送的装置和方法
  • 申请号: US12554871
    申请日: 2009-09-04
  • 公开(公告)号: US20110059614A1
    公开(公告)日: 2011-03-10
  • 发明人: Miguel A. SaldanaGreg Sexton
  • 申请人: Miguel A. SaldanaGreg Sexton
  • 主分类号: H01L21/306
  • IPC分类号: H01L21/306
Apparatus and Methods for Enhanced Fluid Delivery on Bevel Etch Applications
摘要:
An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/28)
H01L21/302 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理,例如电解腐蚀(形成绝缘层的入H01L21/31;绝缘层的后处理入H01L21/3105)
0/0