A method for producing a memory device with nanoparticles, comprising the steps of: a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric, c) formation of a deposition of nanoparticles on the first dielectric, d) removal of the remaining ionic liquid, e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.