发明申请
US20110011983A1 MULTIJUNCTION PHOTOVOLTAIC CELL GROWN ON HIGH-MISCUT-ANGLE SUBSTRATE 审中-公开
多功能光电池在高偏角基底上形成

MULTIJUNCTION PHOTOVOLTAIC CELL GROWN ON HIGH-MISCUT-ANGLE SUBSTRATE
摘要:
The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.
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