发明申请
US20100314774A1 RELIABLE INTERCONNECTS 有权
可靠的互联

RELIABLE INTERCONNECTS
摘要:
A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography.
公开/授权文献
信息查询
0/0