发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12784620申请日： 2010-05-21
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公开(公告)号： US20100314663A1公开(公告)日： 2010-12-16
- 发明人: Nobuyuki ITO , John Kevin Twynam
- 申请人： Nobuyuki ITO , John Kevin Twynam
- 优先权： JP2009-140271 20090611
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining compound semiconductor layer layered on the base compound semiconductor layer to define a channel, and an impact ionization control layer that is layered within a layering range of the base compound semiconductor layer and controls the location of impact ionization, wherein the base compound semiconductor layer is formed of a first compound semiconductor, the channel defining compound semiconductor layer is formed of a second compound semiconductor, and the impact ionization control layer is formed of a third compound semiconductor that has a smaller band gap than the first compound semiconductor.
公开/授权文献
- US08288796B2 Semiconductor device 公开/授权日：2012-10-16
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