发明申请
US20100308475A1 COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND A PRODUCTION METHOD 审中-公开
至少两个半导体基板的复合材料和生产方法

  • 专利标题: COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND A PRODUCTION METHOD
  • 专利标题(中): 至少两个半导体基板的复合材料和生产方法
  • 申请号: US12733861
    申请日: 2008-09-02
  • 公开(公告)号: US20100308475A1
    公开(公告)日: 2010-12-09
  • 发明人: Achim TrautmannAndo Feyh
  • 申请人: Achim TrautmannAndo Feyh
  • 优先权: DE102007048332.7 20071009
  • 国际申请: PCT/EP2008/061548 WO 20080902
  • 主分类号: H01L23/488
  • IPC分类号: H01L23/488 H01L21/768
COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND A PRODUCTION METHOD
摘要:
A composite, including a first semiconductor substrate that is secured by soldering material to at least one second semiconductor substrate, a eutectic being formed between the soldering material and the second semiconductor substrate and/or at least one layer possibly provided on the semiconductor substrate. It is provided that the eutectic is formed between the soldering material and a microstructure, which is formed in the region of contact with the soldering material on the second semiconductor substrate and/or the layer. Also described is a production method.
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