发明申请
US20100308383A1 SEMICONDUCTOR DEVICE HAVING A POROUS INSULATION LAYER WITH A PERMEATION PREVENTION LAYER COATING THE PORES AND METHOD FOR MANUFACTURING THE SAME 审中-公开
具有多孔绝缘层的多孔绝缘层的半导体器件及其制造方法及其制造方法

  • 专利标题: SEMICONDUCTOR DEVICE HAVING A POROUS INSULATION LAYER WITH A PERMEATION PREVENTION LAYER COATING THE PORES AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 具有多孔绝缘层的多孔绝缘层的半导体器件及其制造方法及其制造方法
  • 申请号: US12493282
    申请日: 2009-06-29
  • 公开(公告)号: US20100308383A1
    公开(公告)日: 2010-12-09
  • 发明人: Min Jung SHIN
  • 申请人: Min Jung SHIN
  • 优先权: KR10-2009-0049350 20090604
  • 主分类号: H01L29/423
  • IPC分类号: H01L29/423 H01L21/31 H01L21/302
SEMICONDUCTOR DEVICE HAVING A POROUS INSULATION LAYER WITH A PERMEATION PREVENTION LAYER COATING THE PORES AND METHOD FOR MANUFACTURING THE SAME
摘要:
A semiconductor device having a porous insulation layer with a permeation prevention layer coating the pores for use in protecting against hydrogen permeation into source and drain areas is presented. The semiconductor device includes a conductive pattern, an insulation layer, and a permeation prevention layer. The conductive pattern is formed on a semiconductor substrate. The insulation layer is formed on a surface of the conductive pattern and includes a porous layer having a plurality of pores. The permeation prevention layer is formed on exposed surfaces of the pores in the porous layer.
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