- 专利标题: Semiconductor Device with an Improved Solder Joint
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申请号: US12841621申请日: 2010-07-22
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公开(公告)号: US20100291734A1公开(公告)日: 2010-11-18
- 发明人: Masazumi AMAGAI
- 申请人: Masazumi AMAGAI
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/60
- IPC分类号: H01L21/60
摘要:
A semiconductor device with an improved solder joint system is described. The solder system includes two copper contact pads connected by a body of solder and the solder is an alloy including tin, silver, and at least one metal from the transition groups IIIA, IVA, VA, VIA, VIIA, and VIIIA of the Periodic Table of the Elements. The solder joint system also includes, between the pads and the solder, layers of intermetallic compounds, which include grains of copper and tin compounds and copper, silver, and tin compounds. The compounds contain the transition metals. The inclusion of the transition metals in the compound grains reduce the compound grains size and prevent grain size increases after the solder joint undergoes repeated solid/liquid/solid cycles.
公开/授权文献
- US07884009B2 Semiconductor device with an improved solder joint 公开/授权日:2011-02-08
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