Invention Application
- Patent Title: LOW-REFRACTIVE-INDEX FILM, METHOD OF DEPOSITING THE SAME, AND ANTIREFLECTION FILM
- Patent Title (中): 低折射率薄膜,其沉积方法和抗反射膜
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Application No.: US12666453Application Date: 2008-05-20
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Publication No.: US20100186630A1Publication Date: 2010-07-29
- Inventor: Mikihiro Taketomo , Toshitaka Kawashima , Yoshihiro Oshima
- Applicant: Mikihiro Taketomo , Toshitaka Kawashima , Yoshihiro Oshima
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2007-170584 20070628
- International Application: PCT/JP2008/059189 WO 20080520
- Main IPC: C09D1/00
- IPC: C09D1/00 ; C23C14/38

Abstract:
Provided is a method of depositing a low-refractive-index film, by which a thin film having uniform composition distribution in the film and having a low refractive index can be formed, a low-refractive-index film deposited by the method of depositing a low-refractive-index film, and furthermore, an antireflection film including the low-refractive-index film. In a method of depositing a low-refractive-index film including depositing a low-refractive-index film composed of MgF2—SiO2 on a substrate 11 by a reactive sputtering method, sputtering deposition is conducted using targets 4A and 4B composed of a sintered body of MgF2—SiO2 by applying an alternating voltage with a frequency in the range of 20 to 90 kHz between the substrate 11 and the targets 4A and 4B in an atmosphere of a mixed gas of an inert gas O2.
Information query
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