发明申请
- 专利标题: Semiconductor Device and Manufacturing Method Thereof
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12563608申请日: 2009-09-21
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公开(公告)号: US20100072574A1公开(公告)日: 2010-03-25
- 发明人: Kazuaki OHSHIMA
- 申请人: Kazuaki OHSHIMA
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2008-245124 20080925
- 主分类号: H01L29/86
- IPC分类号: H01L29/86 ; H01L21/02
摘要:
A resistor whose characteristic value can be changed without requiring a photolithography process again is provided. The resistor includes a plurality of first resistor units which is connected serially to each other and a second resistor unit which is connected in parallel to part of the first resistor units. Then, after the measurement of a semiconductor integrated circuit, the second resistor unit is electrically disconnected as necessary. The first resistor units may be either a unit including a single resistor or may be a unit including a plurality of resistors.
公开/授权文献
- US09960116B2 Semiconductor device and manufacturing method thereof 公开/授权日:2018-05-01
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