发明申请
US20100034000A1 ELECTRONIC CIRCUIT HAVING A DIODE-CONNECTED MOS TRANSISTOR WITH AN IMPROVED EFFICIENCY
有权
具有改善效率的二极管连接MOS晶体管的电子电路
- 专利标题： ELECTRONIC CIRCUIT HAVING A DIODE-CONNECTED MOS TRANSISTOR WITH AN IMPROVED EFFICIENCY
- 专利标题（中）： 具有改善效率的二极管连接MOS晶体管的电子电路
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申请号： US12497210申请日： 2009-07-02
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公开(公告)号： US20100034000A1公开(公告)日： 2010-02-11
- 发明人: Marc Battista , Hervé Chalopin , Hérve Barthelemy
- 申请人： Marc Battista , Hervé Chalopin , Hérve Barthelemy
- 申请人地址： FR Rousset FR Marseille Cedex 3
- 专利权人： STMicroelectronics (Rousset) SAS,Universite de Provence (Aix-Marseille I)
- 当前专利权人： STMicroelectronics (Rousset) SAS,Universite de Provence (Aix-Marseille I)
- 当前专利权人地址： FR Rousset FR Marseille Cedex 3
- 优先权： FR08/54555 20080704
- 主分类号： H02M7/217
- IPC分类号： H02M7/217
摘要：
An integrated circuit including a semiconductor layer; and a MOS transistor including first and second power terminals and a bulk insulated from the semiconductor layer, the first power terminal being intended to receive an oscillating signal, the transistor gate and the bulk being connected to the first power terminal.
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