发明申请
US20100015732A1 SEMICONDUCTOR CHIP REPAIR BY STACKING OF A BASE SEMICONDUCTOR CHIP AND A REPAIR SEMICONDUCTOR CHIP
失效
通过堆叠半导体芯片和修复半导体芯片的半导体芯片修复
- 专利标题: SEMICONDUCTOR CHIP REPAIR BY STACKING OF A BASE SEMICONDUCTOR CHIP AND A REPAIR SEMICONDUCTOR CHIP
- 专利标题(中): 通过堆叠半导体芯片和修复半导体芯片的半导体芯片修复
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申请号: US12174198申请日: 2008-07-16
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公开(公告)号: US20100015732A1公开(公告)日: 2010-01-21
- 发明人: Pradip Bose , Eren Kursun , Jude A. Rivers , Victor Zyuban
- 申请人: Pradip Bose , Eren Kursun , Jude A. Rivers , Victor Zyuban
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/66
摘要:
Base semiconductor chips, each comprising a plurality of chiplets, are manufactured and tested. For a base semiconductor chip having at least one non-functional chiplet, at least one repair semiconductor chiplet, which provides the same functionality as one of the at least one non-functional chiplet is designed to provide, is vertically stacked. The at least one repair semiconductor chiplet provides the functionality that the at least one non-functional chiplet is designed to provide to the base semiconductor chip. A functional multi-chip assembly is formed, which provides the same functionality as a base semiconductor chip in which all chiplets are functional. In case a first attempt to repair the base semiconductor chip by stacking repair semiconductor chips is unsuccessful, additional repair semiconductor chips may be subsequently stacked to fully repair the base semiconductor chip.
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