Invention Application
- Patent Title: DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF
- Patent Title (中): 扩散障碍及其形成方法
-
Application No.: US12144652Application Date: 2008-06-24
-
Publication No.: US20090315152A1Publication Date: 2009-12-24
- Inventor: Shyue Seng TAN , Lee Wee TEO , Yung Fu CHONG , Elgin QUEK , Sanford CHU
- Applicant: Shyue Seng TAN , Lee Wee TEO , Yung Fu CHONG , Elgin QUEK , Sanford CHU
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L29/32
- IPC: H01L29/32 ; H01L21/76
Abstract:
A method of forming a device is presented. The method includes providing a structure having first and second regions. A diffusion barrier is formed between at least a portion of the first and second regions. The diffusion barrier comprises cavities that reduce diffusion of elements between the first and second regions.
Public/Granted literature
- US08324031B2 Diffusion barrier and method of formation thereof Public/Granted day:2012-12-04
Information query
IPC分类:
