发明申请
- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12534183申请日： 2009-08-03
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公开(公告)号： US20090291529A1公开(公告)日： 2009-11-26
- 发明人: TADASHI MUNAKATA , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- 申请人： TADASHI MUNAKATA , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
- 专利权人： RENESAS TECHNOLOGY CORP.,RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
- 当前专利权人： RENESAS TECHNOLOGY CORP.,RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
- 优先权： JP2002-211939 20020722
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/50
摘要：
A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.
公开/授权文献
- US07816185B2 Method of manufacturing a semiconductor device 公开/授权日：2010-10-19
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