METHOD OF MAKING DIAMOND NANOPILLARS

Invention Application

US20090233445A1 METHOD OF MAKING DIAMOND NANOPILLARS 有权

Title translation: 制备金刚石纳米线的方法

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Patent Title: METHOD OF MAKING DIAMOND NANOPILLARS
Patent Title (中): 制备金刚石纳米线的方法
Application No.: US12046673

Application Date: 2008-03-12
Publication No.: US20090233445A1

Publication Date: 2009-09-17
Inventor: Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
Applicant: Shuit-Tong Lee , Wenjun Zhang , Igor Bello , You-Sheng Zou
Applicant Address: HK Kowloon
Assignee: CITY UNIVERSITY OF HONG KONG
Current Assignee: CITY UNIVERSITY OF HONG KONG
Current Assignee Address: HK Kowloon
Main IPC: H01L21/311
IPC: H01L21/311 ; C23F1/02

Abstract:

A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.

Abstract(Chinese):

一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

Public/Granted literature

US08101526B2 Method of making diamond nanopillars Public/Granted day:2012-01-24

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀