发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US12067808申请日: 2006-09-15
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公开(公告)号: US20090229756A1公开(公告)日: 2009-09-17
- 发明人: Setsuo Nakajima , Toshimasa Takeuchi , Junichi Matsuzaki , Satoshi Mayumi , Osamu Nishikawa , Naomichi Saito , Yoshinori Nakano , Makoto Fukushi , Yoshihiko Furuno
- 申请人: Setsuo Nakajima , Toshimasa Takeuchi , Junichi Matsuzaki , Satoshi Mayumi , Osamu Nishikawa , Naomichi Saito , Yoshinori Nakano , Makoto Fukushi , Yoshihiko Furuno
- 申请人地址: JP Osaka-shi, Osaka
- 专利权人: SEKISUI CHEMICAL CO., LTD.
- 当前专利权人: SEKISUI CHEMICAL CO., LTD.
- 当前专利权人地址: JP Osaka-shi, Osaka
- 优先权: JP2005-275589 20050922; JP2006-105122 20060406; JP2006-105123 20060406
- 国际申请: PCT/JP2006/318381 WO 20060915
- 主分类号: C23F1/08
- IPC分类号: C23F1/08
摘要:
In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.
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