发明申请
- 专利标题： INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器内部电压发生器
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申请号： US12266623申请日： 2008-11-07
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公开(公告)号： US20090219081A1公开(公告)日： 2009-09-03
- 发明人: Jae-Kwan KWON , Yee-Yul Kim
- 申请人： Jae-Kwan KWON , Yee-Yul Kim
- 申请人地址： KE Gyeonggi-do
- 专利权人： HYNIX SEMICONDUCTOR, INC.
- 当前专利权人： HYNIX SEMICONDUCTOR, INC.
- 当前专利权人地址： KE Gyeonggi-do
- 优先权： KR10-2008-0019682 20080303
- 主分类号： H02M3/139
- IPC分类号： H02M3/139
摘要：
An internal voltage generation circuit of semiconductor memory device includes a reference voltage generation unit configured to generate a reference voltage, and a pumping control unit configured to be enabled at every active mode, compare the reference voltage with a fed-back voltage of a pumping voltage terminal, and output a pumping enable signal based on a comparison result. A storage unit is configured to store and output the pumping enable signal outputted from the pumping control unit. A charge pumping unit is configured to drive the pumping voltage terminal by performing a charge pumping operation in response to the pumping enable signal outputted from the storage unit.
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