Invention Application
- Patent Title: FIELD ELECTRON EMISSION SOURCE AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 场电子发射源及其制造方法
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Application No.: US12180210Application Date: 2008-07-25
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Publication No.: US20090146547A1Publication Date: 2009-06-11
- Inventor: LI QIAN , LIANG LIU , SHOU-SHAN FAN
- Applicant: LI QIAN , LIANG LIU , SHOU-SHAN FAN
- Applicant Address: CN Beijing TW Tu-Cheng
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW Tu-Cheng
- Priority: CN200710124827.3 20071205
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J9/00

Abstract:
A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.
Public/Granted literature
- US08350459B2 Field electron emission source Public/Granted day:2013-01-08
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