发明申请
- 专利标题: AMPLIFIER CIRCUIT FOR DOUBLE SAMPLED ARCHITECTURES
- 专利标题(中): 用于双重采样架构的放大器电路
-
申请号: US12244214申请日: 2008-10-02
-
公开(公告)号: US20090033371A1公开(公告)日: 2009-02-05
- 发明人: Brandt Braswell , David R. LoCascio
- 申请人: Brandt Braswell , David R. LoCascio
- 申请人地址: US TX Austin
- 专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址: US TX Austin
- 主分类号: H03K5/22
- IPC分类号: H03K5/22
摘要:
A double sampled switched capacitor architecture as described herein includes an amplifier having two separate inputs corresponding to two separate amplifier sections. The amplifier uses a first differential transistor pair for the first amplifier section, a second differential transistor pair for the second amplifier section, a first tail current bias arrangement for the first differential transistor pair, and a second tail current bias arrangement for the second differential transistor pair. The tail current bias arrangements are driven by a bias switching architecture that alternately activates one tail current bias arrangement while at least partially deactivating the other tail current bias arrangement. The amplifier and bias switching architecture cooperate to eliminate gain error that would otherwise be caused by a common parasitic capacitance shared by a single amplifier section.
公开/授权文献
- US07595666B2 Amplifier circuit for double sampled architectures 公开/授权日:2009-09-29
信息查询
IPC分类: