Invention Application
- Patent Title: HIGH-TRANSMISSION ATTENUATING PSM
- Patent Title (中): 高传动衰减PSM
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Application No.: US11777280Application Date: 2007-07-12
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Publication No.: US20080274414A1Publication Date: 2008-11-06
- Inventor: Chih-Li Chen
- Applicant: Chih-Li Chen
- Priority: TW096115718 20070503
- Main IPC: G03C5/00
- IPC: G03C5/00

Abstract:
An attenuating PSM includes a quartz substrate, a first dummy pad pattern disposed on the quartz substrate, wherein the first dummy pad pattern is composed of a first phase shifter material layer with a transmission rate of greater than or equal to 15%, and a first opaque pattern disposed at a center area of the first dummy pad pattern. The first opaque pattern has a shape that is analogous to the first dummy pad pattern and surface area of the first opaque pattern is smaller than that of the first dummy pad pattern.
Public/Granted literature
- US07727683B2 High-transmission attenuating PSM Public/Granted day:2010-06-01
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