Invention Application
- Patent Title: Magnetic tunnel junction (MTJ) based magnetic field angle sensor
- Patent Title (中): 磁隧道结(MTJ)磁场角传感器
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Application No.: US11799706Application Date: 2007-05-02
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Publication No.: US20080272771A1Publication Date: 2008-11-06
- Inventor: Yimin Guo , Po-Kang Wang
- Applicant: Yimin Guo , Po-Kang Wang
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Main IPC: G01R33/00
- IPC: G01R33/00

Abstract:
A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
Public/Granted literature
- US07635974B2 Magnetic tunnel junction (MTJ) based magnetic field angle sensor Public/Granted day:2009-12-22
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