Invention Application
US20080266997A1 VOLATILE MEMORY ELEMENTS WITH ELEVATED POWER SUPPLY LEVELS FOR PROGRAMMABLE LOGIC DEVICE INTEGRATED CIRCUITS
有权
具有可编程逻辑器件集成电路的高电压电平的易失性存储器元件
- Patent Title: VOLATILE MEMORY ELEMENTS WITH ELEVATED POWER SUPPLY LEVELS FOR PROGRAMMABLE LOGIC DEVICE INTEGRATED CIRCUITS
- Patent Title (中): 具有可编程逻辑器件集成电路的高电压电平的易失性存储器元件
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Application No.: US12169598Application Date: 2008-07-08
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Publication No.: US20080266997A1Publication Date: 2008-10-30
- Inventor: Lin-Shih Liu , Mark T. Chan , Toan D. Do
- Applicant: Lin-Shih Liu , Mark T. Chan , Toan D. Do
- Main IPC: G11C5/14
- IPC: G11C5/14 ; H03K19/173

Abstract:
Integrated circuits are provided that have volatile memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable core logic including transistors with gates. The core logic is powered using a core logic power supply level defined by a core logic positive power supply voltage and a core logic ground voltage. When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the core logic to customize the programmable logic device. The memory elements are powered with a memory element power supply level defined by a memory element positive power supply voltage and a memory element ground power supply voltage. The memory element power supply level is elevated with respect to the core logic power supply level.
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