Invention Application
- Patent Title: MEMORY CELLS, MEMORY DEVICES AND INTEGRATED CIRCUITS INCORPORATING THE SAME
- Patent Title (中): 存储器单元，存储器件和整合电路
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Application No.: US11692627Application Date: 2007-03-28
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Publication No.: US20080239803A1Publication Date: 2008-10-02
- Inventor: Hyun-Jin CHO
- Applicant: Hyun-Jin CHO
- Applicant Address: US TX Austin
- Assignee: ADVANCED MICRO DEVICES, INC.
- Current Assignee: ADVANCED MICRO DEVICES, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/39
- IPC: G11C11/39
Abstract:
A memory cell is provided which includes an access transistor and a gated lateral thyristor (GLT) device. The access transistor includes a source node. The gated lateral thyristor (GLT) device includes an anode node coupled to the source node of the access transistor.
Public/Granted literature
- US07630235B2 Memory cells, memory devices and integrated circuits incorporating the same Public/Granted day:2009-12-08
Information query
