发明申请
- 专利标题: MEMORY PRODUCTS AND MANUFACTURING METHODS THEREOF
- 专利标题(中): 记忆产品及其制造方法
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申请号: US11686996申请日: 2007-03-16
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公开(公告)号: US20080229161A1公开(公告)日: 2008-09-18
- 发明人: Cheng-Hung Lee , Ching-Wei Wu , Chung-Cheng Chou , Hung-Jen Liao
- 申请人: Cheng-Hung Lee , Ching-Wei Wu , Chung-Cheng Chou , Hung-Jen Liao
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
Memory products and manufacturing methods thereof. A memory product comprises at least one memory cell and at least one redundancy memory cell. The memory cell and the redundancy memory cell have different physical or electronic properties. The redundancy memory cells are used as repair schemes for the memory cell if the memory cell is determined to have experienced Vccmin failure.
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