发明申请
US20080185570A1 PHASE CHANGE MATERIAL (PCM) MEMORY DEVICES WITH BIPOLAR JUNCTION TRANSISTORS AND METHODS FOR MAKING THEREOF
有权
具有双极性晶体管的相变材料（PCM）存储器件及其制造方法
- 专利标题： PHASE CHANGE MATERIAL (PCM) MEMORY DEVICES WITH BIPOLAR JUNCTION TRANSISTORS AND METHODS FOR MAKING THEREOF
- 专利标题（中）： 具有双极性晶体管的相变材料（PCM）存储器件及其制造方法
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申请号： US12024986申请日： 2008-02-01
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公开(公告)号： US20080185570A1公开(公告)日： 2008-08-07
- 发明人: Albert Wu , Chien-Chuan Wei
- 申请人： Albert Wu , Chien-Chuan Wei
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Methods for fabricating highly compact PCM memory devices are described herein. The methods may include forming a bipolar junction transistor (BJT) structure on a substrate including creating a base of the BJT structure on the substrate and creating an emitter of the BJT structure on top of the base opposite of the substrate. A heating element may then be constructed on the emitter of the BJT structure, wherein the heating element includes a material to generate heat when provided with an electrical current from the emitter. A phase change material (PCM) cell may then be built on the heating element opposite of the BJT structure.
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