Invention Application
- Patent Title: Codes For Limited Magnitude Asymetric Errors In Flash Memories
- Patent Title (中): 闪存中有限幅度不对称误差的代码
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Application No.: US11969846Application Date: 2008-01-04
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Publication No.: US20080168320A1Publication Date: 2008-07-10
- Inventor: Yuval Cassuto , Jehoshua Bruck , Moshe Schwartz , Vasken Bohossian
- Applicant: Yuval Cassuto , Jehoshua Bruck , Moshe Schwartz , Vasken Bohossian
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
Error correction is tailored for the use of an ECC for correcting asymmetric errors with low magnitude in a data device, with minimal modifications to the conventional data device architecture. The technique permits error correction and data recovery to be performed with reduced-size error correcting code alphabets. For particular cases, the technique can reduce the problem of constructing codes for correcting limited magnitude asymmetric errors to the problem of constructing codes for symmetric errors over small alphabets. Also described are speed up techniques for reaching target data levels more quickly, using more aggressive memory programming operations.
Public/Granted literature
- US08296623B2 Codes for limited magnitude asymmetric errors in flash memories Public/Granted day:2012-10-23
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