- 专利标题: Solid-state imaging device driving method
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申请号: US12071090申请日: 2008-02-15
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公开(公告)号: US20080143861A1公开(公告)日: 2008-06-19
- 发明人: Makoto Inagaki , Yoshiyuki Matsunaga
- 申请人: Makoto Inagaki , Yoshiyuki Matsunaga
- 申请人地址: JP Osaka
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2003-054589 20030228
- 主分类号: H04N5/335
- IPC分类号: H04N5/335
摘要:
Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
公开/授权文献
- US07714920B2 Solid-state imaging device driving method 公开/授权日:2010-05-11
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