Invention Application
US20080102607A1 III-V COMPOUND SEMICONDUCTOR DEVICE WITH A SURFACE LAYER IN ACCESS REGIONS HAVING CHARGE OF POLARITY OPPOSITE TO CHANNEL CHARGE AND METHOD OF MAKING THE SAME
有权
具有带有极性对准电荷的通道区域中具有表面层的III-V族化合物半导体器件及其制造方法
- Patent Title: III-V COMPOUND SEMICONDUCTOR DEVICE WITH A SURFACE LAYER IN ACCESS REGIONS HAVING CHARGE OF POLARITY OPPOSITE TO CHANNEL CHARGE AND METHOD OF MAKING THE SAME
- Patent Title (中): 具有带有极性对准电荷的通道区域中具有表面层的III-V族化合物半导体器件及其制造方法
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Application No.: US11554859Application Date: 2006-10-31
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Publication No.: US20080102607A1Publication Date: 2008-05-01
- Inventor: Matthias Passlack , Ravindranath Droopad , Karthik Rajagopalan
- Applicant: Matthias Passlack , Ravindranath Droopad , Karthik Rajagopalan
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of forming a III-V compound semiconductor structure (10) comprises providing a III-V compound semiconductor substrate including a semi-insulating substrate (12) having at least one epitaxial layer formed thereon and further having a gate insulator (14) overlying the at least one epitaxial layer. The at least one epitaxial layer formed on the semi-insulating substrate comprises an epi-structure suitable for use in the formation of a channel of a III-V compound semiconductor MOSFET device, wherein the channel (30) having a first polarity. The method further comprises forming a charge layer (22) at a surface of the gate insulator, the charge layer having a second polarity, wherein the second polarity is opposite to the first polarity.
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