- 专利标题： Semiconductor device and method for fabricating a semiconductor device
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申请号： US11999466申请日： 2007-12-04
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公开(公告)号： US20080087980A1公开(公告)日： 2008-04-17
- 发明人: Jun-Hee Cho
- 申请人： Jun-Hee Cho
- 优先权： KR2005-0055863 20050627
- 主分类号： H01L25/00
- IPC分类号： H01L25/00
摘要：
A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second insulation layers for device isolation are formed on sidewalls of the first insulation layers.
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