发明申请
- 专利标题： Method for Manufacturing Semiconductor Device
- 专利标题（中）： 半导体器件制造方法
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申请号： US11863488申请日： 2007-09-28
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公开(公告)号： US20080083625A1公开(公告)日： 2008-04-10
- 发明人: SANG CHUL KIM
- 申请人： SANG CHUL KIM
- 优先权： KR10-2006-0097750 20061009
- 主分类号： C25D7/12
- IPC分类号： C25D7/12 ; H01L21/311
摘要：
A method for manufacturing a semiconductor device is provided. The method can include forming a pattern for a copper line on a semiconductor substrate, forming a barrier metal layer on the pattern, removing a natural oxide layer from the barrier metal layer using a basic compound, and depositing copper ions on the barrier metal layer. A copper seed layer is not necessary.
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