发明申请
US20080057682A1 Manufacturing method of an integrated circuit formed on a semiconductor substrate
审中-公开
形成在半导体基板上的集成电路的制造方法
- 专利标题： Manufacturing method of an integrated circuit formed on a semiconductor substrate
- 专利标题（中）： 形成在半导体基板上的集成电路的制造方法
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申请号： US11899275申请日： 2007-09-04
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公开(公告)号： US20080057682A1公开(公告)日： 2008-03-06
- 发明人: Camillo Bresolin , Davide Erbetta , Maria Marangon
- 申请人： Camillo Bresolin , Davide Erbetta , Maria Marangon
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 优先权： EP06425606.8 20060901
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; H01L29/06
摘要：
An embodiment of a method for manufacturing an integrated circuit formed on a semiconductor substrate comprising the steps of: forming at least one shielding structure on said semiconductor substrate, forming a protective layer at least on portions of the semiconductor substrate that surround said shielding structure, carrying out a ionic implantation step with a tilt angle with respect to a normal to a plane defined by said semiconductor substrate so that said at least one shielding structure shields first portions of the protective layer, removing second portions of the protective layer that have been subjected to the ionic implant.
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