Invention Application
US20080006850A1 System and method for forming through wafer vias using reverse pulse plating
审中-公开
使用反向脉冲电镀形成通过晶片通孔的系统和方法
- Patent Title: System and method for forming through wafer vias using reverse pulse plating
- Patent Title (中): 使用反向脉冲电镀形成通过晶片通孔的系统和方法
-
Application No.: US11482944Application Date: 2006-07-10
-
Publication No.: US20080006850A1Publication Date: 2008-01-10
- Inventor: Kimon Ribnicek , Gregory A. Carlson , Paulo Silveira da Motta , Jian Zhao
- Applicant: Kimon Ribnicek , Gregory A. Carlson , Paulo Silveira da Motta , Jian Zhao
- Applicant Address: US CA Goleta
- Assignee: Innovative Micro Technology
- Current Assignee: Innovative Micro Technology
- Current Assignee Address: US CA Goleta
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/20

Abstract:
A method for forming through wafer vias in a substrate uses a Cr/Au seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, a reverse plating process uses a forward current to plate the bottom and sides of the blind hole, and a reverse current to de-plate material in or near the top. Using the reverse pulse plating technique, the plating proceeds generally from the bottom of the blind hole to the top. To form the through wafer via, the back side of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.
Information query
IPC分类: