发明申请
- 专利标题： Field effect transistor and method for fabricating the same
- 专利标题（中）： 场效应晶体管及其制造方法
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申请号： US11730615申请日： 2007-04-03
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公开(公告)号： US20070278507A1公开(公告)日： 2007-12-06
- 发明人: Satoshi Nakazawa , Tetsuzo Ueda
- 申请人： Satoshi Nakazawa , Tetsuzo Ueda
- 优先权： JP2006-151051 20060531
- 主分类号： H01L29/22
- IPC分类号： H01L29/22 ; H01L21/20
摘要：
A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1-yN (wherein 0
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