Invention Application
US20070249255A1 Method for manufacturing an electron-emitting device with first and second carbon films
审中-公开
用于制造具有第一和第二碳膜的电子发射器件的方法
- Patent Title: Method for manufacturing an electron-emitting device with first and second carbon films
- Patent Title (中): 用于制造具有第一和第二碳膜的电子发射器件的方法
-
Application No.: US11754487Application Date: 2007-05-29
-
Publication No.: US20070249255A1Publication Date: 2007-10-25
- Inventor: Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
- Applicant: Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
- Applicant Address: JP TOKYO
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP TOKYO
- Priority: JP6-226115 19940829; JP6-336626 19941226; JP6-336712 19941226; JP6-336713 19941226; JP7-87759 19950322; JP7-182049 19950626
- Main IPC: H01J9/00
- IPC: H01J9/00
Abstract:
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
Information query
