发明申请
- 专利标题： Voltage-controlled semiconductor device
- 专利标题（中）： 压控半导体器件
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申请号： US10593878申请日： 2005-03-17
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公开(公告)号： US20070200150A1公开(公告)日： 2007-08-30
- 发明人: Katsunori Asano
- 申请人： Katsunori Asano
- 优先权： JP2004-083233 20040322
- 国际申请： PCT/JP05/04834 WO 20050317
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
SiC-IGBTs, which have an inversion-type channel with high channel resistance and have high on-voltage due to an influence from the surface state of the interface between a gate insulating film and a base layer, are required to decrease the on-voltage. An embedded collector region is partially formed in a base layer which is formed on an emitter layer of a SiC semiconductor. A channel layer is formed on the base layer and the embedded collector region to constitute an accumulation-type channel. Consequently, at on time, holes are accumulated in the upper layer portion of the channel layer so that a low-resistant channel is formed. Current by the holes flows to the emitter layer through a channel from the collector region and becomes a base current for an npn transistor composed of the embedded collector region, the base region and the emitter region.
公开/授权文献
- US07626232B2 Voltage-controlled semiconductor device 公开/授权日：2009-12-01
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