发明申请
- 专利标题: Manufacturing method of semiconductor integrated circuit device and probe card
- 专利标题(中): 半导体集成电路器件和探针卡的制造方法
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申请号: US11783778申请日: 2007-04-12
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公开(公告)号: US20070190671A1公开(公告)日: 2007-08-16
- 发明人: Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
- 申请人: Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
- 优先权: JP2004-115048 20040409
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes, in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.
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