Invention Application
- Patent Title: SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 浅层隔离结构及其制造方法
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Application No.: US11697751Application Date: 2007-04-09
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Publication No.: US20070178664A1Publication Date: 2007-08-02
- Inventor: Uway Tseng , Ching-Yu Chang
- Applicant: Uway Tseng , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu 300-77
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu 300-77
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A shallow trench isolation structure has a trench formed in a substrate, a silicon oxynitride layer conformally formed on the sidewalls and bottom of the trench, and a high density plasma (HDP) oxide layer substantially filling the trench.
Information query
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