发明申请
- 专利标题: Semiconductor laser diode
- 专利标题(中): 半导体激光二极管
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申请号: US11651074申请日: 2007-01-09
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公开(公告)号: US20070177646A1公开(公告)日: 2007-08-02
- 发明人: Ryuichi Sogabe , Yoshinobu Kawaguchi , Takeshi Kamikawa
- 申请人: Ryuichi Sogabe , Yoshinobu Kawaguchi , Takeshi Kamikawa
- 申请人地址: JP Osaka-shi
- 专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2006-021144 20060130
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one cavity facet has sufficient initial characteristics with a film structure having excellent heat radiability for allowing stable high-output lasing over a long period without reducing a catastrophic optical damage level on an emission end.
公开/授权文献
- US07697585B2 Semiconductor laser diode 公开/授权日:2010-04-13
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