III-V compound semiconductor heterostructure MOSFET with a high workfunction metal gate electrode and process of making the same

Invention Application

US20070148879A1 III-V compound semiconductor heterostructure MOSFET with a high workfunction metal gate electrode and process of making the same 审中-公开

Title translation: 具有高功函数金属栅电极的III-V化合物半导体异质结构MOSFET及其制造方法

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Patent Title: III-V compound semiconductor heterostructure MOSFET with a high workfunction metal gate electrode and process of making the same
Patent Title (中): 具有高功函数金属栅电极的III-V化合物半导体异质结构MOSFET及其制造方法
Application No.: US11315732

Application Date: 2005-12-22
Publication No.: US20070148879A1

Publication Date: 2007-06-28
Inventor: Matthias Passlack , Ravindranath Droopad
Applicant: Matthias Passlack , Ravindranath Droopad
Main IPC: H01L21/336
IPC: H01L21/336

III-V compound semiconductor heterostructure MOSFET with a high workfunction metal gate electrode and process of making the same

Abstract:

A method of forming a metal-insulator-compound semiconductor structure comprises providing an insulator layer overlying a compound semiconductor substrate, the insulator layer having a surface, and forming a metal layer on the surface of the insulator layer using metal organic chemical vapor deposition.

Abstract(Chinese):

形成金属 - 绝缘体 - 化合物半导体结构的方法包括提供覆盖化合物半导体衬底的绝缘体层，所述绝缘体层具有表面，并且使用金属有机化学气相沉积在绝缘体层的表面上形成金属层。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的