Invention Application
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11607312Application Date: 2006-11-30
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Publication No.: US20070126095A1Publication Date: 2007-06-07
- Inventor: Hisashi Tanie
- Applicant: Hisashi Tanie
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Priority: JP2005-348638 20051202
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device has a semiconductor package with a semiconductor element is mounted on a mounting substrate. The mounting substrate has at least two anisotropic areas which are located at both sides of a semiconductor package mounting area in a way to sandwich it and have an anisotropic linear expansion coefficient. In the anisotropic areas, a linear expansion coefficient in a direction toward a center of the semiconductor package mounting area is larger than a linear expansion coefficient in an in-plane direction of the mounting substrate perpendicular to the direction and larger than a linear expansion coefficient of the semiconductor package mounting area in a direction toward the anisotropic areas. The semiconductor device makes it possible to reduce thermal deformation of a semiconductor package mounting area of a mounting substrate easily and at low cost.
Information query
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