Invention Application
US20070126095A1 Semiconductor device and manufacturing method thereof 审中-公开
半导体器件及其制造方法

  • Patent Title: Semiconductor device and manufacturing method thereof
  • Patent Title (中): 半导体器件及其制造方法
  • Application No.: US11607312
    Application Date: 2006-11-30
  • Publication No.: US20070126095A1
    Publication Date: 2007-06-07
  • Inventor: Hisashi Tanie
  • Applicant: Hisashi Tanie
  • Applicant Address: JP Tokyo
  • Assignee: Hitachi, Ltd.
  • Current Assignee: Hitachi, Ltd.
  • Current Assignee Address: JP Tokyo
  • Priority: JP2005-348638 20051202
  • Main IPC: H01L23/495
  • IPC: H01L23/495
Semiconductor device and manufacturing method thereof
Abstract:
A semiconductor device has a semiconductor package with a semiconductor element is mounted on a mounting substrate. The mounting substrate has at least two anisotropic areas which are located at both sides of a semiconductor package mounting area in a way to sandwich it and have an anisotropic linear expansion coefficient. In the anisotropic areas, a linear expansion coefficient in a direction toward a center of the semiconductor package mounting area is larger than a linear expansion coefficient in an in-plane direction of the mounting substrate perpendicular to the direction and larger than a linear expansion coefficient of the semiconductor package mounting area in a direction toward the anisotropic areas. The semiconductor device makes it possible to reduce thermal deformation of a semiconductor package mounting area of a mounting substrate easily and at low cost.
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