Invention Application
US20070082505A1 Method of forming an electrically insulating layer on a compound semiconductor
审中-公开
在化合物半导体上形成电绝缘层的方法
- Patent Title: Method of forming an electrically insulating layer on a compound semiconductor
- Patent Title (中): 在化合物半导体上形成电绝缘层的方法
-
Application No.: US11248923Application Date: 2005-10-11
-
Publication No.: US20070082505A1Publication Date: 2007-04-12
- Inventor: Jonathan Abrokwah , Ravindranath Droopad , Matthias Passlack
- Applicant: Jonathan Abrokwah , Ravindranath Droopad , Matthias Passlack
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of forming an electrically insulating layer (130) on a compound semiconductor (110) comprises: providing a compound semiconductor structure; preparing an upper surface (111) of the compound semiconductor structure to be chemically clean; forming a template (120) on the compound semiconductor structure using a first precursor in a metalorganic chemical vapor deposition (MOCVD) system or a chemical beam epitaxy (CBE) system; and introducing oxygen and a second precursor to the MOCVD system in order to form the electrically insulating layer.
Information query
IPC分类:
