Invention Application
US20070054503A1 Film forming method and fabrication process of semiconductor device
审中-公开
半导体器件的成膜方法和制造工艺
- Patent Title: Film forming method and fabrication process of semiconductor device
- Patent Title (中): 半导体器件的成膜方法和制造工艺
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Application No.: US11510679Application Date: 2006-08-28
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Publication No.: US20070054503A1Publication Date: 2007-03-08
- Inventor: Hiroyuki Takaba , Toshihide Nabatame , Masaru Kadoshima
- Applicant: Hiroyuki Takaba , Toshihide Nabatame , Masaru Kadoshima
- Applicant Address: JP Minato-ku JP Chiyoda-ku
- Assignee: TOKYO ELECTRON LIMITED,Renesas Technology Corp.
- Current Assignee: TOKYO ELECTRON LIMITED,Renesas Technology Corp.
- Current Assignee Address: JP Minato-ku JP Chiyoda-ku
- Priority: JP2005-256947 20050905
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of forming a film on a substrate includes a first step of carrying out first film formation on an insulation layer formed on the substrate by an ALD process, and a second step of carrying out second film formation in continuation to the first step by a CVD process.
Information query
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