发明申请
- 专利标题： Devices incorporating heavily defected semiconductor layers
- 专利标题（中）： 结合严重缺陷的半导体层的器件
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申请号： US11320261申请日： 2005-12-28
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公开(公告)号： US20060267007A1公开(公告)日： 2006-11-30
- 发明人: David Salzman , Eric Harmon , Jerry Woodall
- 申请人： David Salzman , Eric Harmon , Jerry Woodall
- 申请人地址： US CT New Haven
- 专利权人： Yale University
- 当前专利权人： Yale University
- 当前专利权人地址： US CT New Haven
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
The structure and growth method are disclosed for a novel heterojunction diode structure. The invention exploits the Fermi level pinning properties of dislocations and defects in compound semiconductors to achieve heterojunctions with nonlinear current-voltage characteristics despite highly defected, polycrystalline, or amorphous semiconductors. The invention enable new diode, photodetector, and transistor devices to be implemented using highly lattice-mismatched semiconductors. The invention additionally enables thin film diodes, photodetectors, and transistors to be realized.
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