发明申请
US20060240678A1 Method of forming a LP-CVD oxide film without oxidizing an underlying metal film
审中-公开
在不氧化下面的金属膜的情况下形成LP-CVD氧化膜的方法
- 专利标题： Method of forming a LP-CVD oxide film without oxidizing an underlying metal film
- 专利标题（中）： 在不氧化下面的金属膜的情况下形成LP-CVD氧化膜的方法
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申请号： US11155261申请日： 2005-06-17
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公开(公告)号： US20060240678A1公开(公告)日： 2006-10-26
- 发明人: Min Jang , Dong Lee , Eun-Shil Park , Kwang Jeon , Seung Shin , Choon Ryu
- 申请人： Min Jang , Dong Lee , Eun-Shil Park , Kwang Jeon , Seung Shin , Choon Ryu
- 申请人地址： KR Icheon-shi
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Icheon-shi
- 优先权： KR2005-33706 20050422
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of manufacturing a semiconductor device includes forming a LP-CVD oxide film on sides of a gate including a metal film by means of a LP-CVD method that does not cause oxidization of the metal film. Oxidization of a metal film can be prevented physically, and degradation of the electrical device characteristics can be prevented.
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