发明申请
- 专利标题: Methods for forming an assembly for transfer of a useful layer
- 专利标题(中): 用于形成用于转移有用层的组件的方法
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申请号: US11437654申请日: 2006-05-22
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公开(公告)号: US20060231203A1公开(公告)日: 2006-10-19
- 发明人: Fabrice Letertre , Olivier Rayssac
- 申请人: Fabrice Letertre , Olivier Rayssac
- 申请人地址: FR Bernin
- 专利权人: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
- 当前专利权人: S.O.I.Tec Silicon on Insulator Technologies S.A., a French company
- 当前专利权人地址: FR Bernin
- 优先权: FR0303163 20030314
- 主分类号: B32B37/26
- IPC分类号: B32B37/26 ; B32B38/10
摘要:
Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.
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