发明申请
US20060134882A1 Method to improve device isolation via fabrication of deeper shallow trench isolation regions
审中-公开
通过制造更深的浅沟槽隔离区来改善器件隔离的方法
- 专利标题: Method to improve device isolation via fabrication of deeper shallow trench isolation regions
- 专利标题(中): 通过制造更深的浅沟槽隔离区来改善器件隔离的方法
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申请号: US11021030申请日: 2004-12-22
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公开(公告)号: US20060134882A1公开(公告)日: 2006-06-22
- 发明人: Guowei Zhang
- 申请人: Guowei Zhang
- 专利权人: Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人: Chartered Semiconductor Manufacturing Ltd.
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A method of forming a shallow trench isolation (STI) structure wherein the depth of the STI structure has been extended via formation of an underlying silicon oxide region, has been developed. After definition of a shallow trench isolation shape in a top portion of a semiconductor substrate a self-aligned ion implantation procedure is employed to place oxygen ions in portions of the semiconductor substrate exposed at the bottom portion of the shallow trench shape. Growth of a liner layer on the exposed surfaces of the shallow trench shape, or growth of a liner layer followed by anneal procedure, results in activation of the implanted oxygen ions creating the desired silicon oxide region in a portion of the semiconductor substrate underlying the bottom of the shallow trench shape. Insulator filling of the shallow trench shape now results in a deeper STI structure comprised of the insulator filled shallow trench shape and the underlying silicon oxide region.
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