发明申请
US20060033121A1 Chemical sensor using chemically induced electron-hole production at a Schottky barrier
失效
化学传感器使用肖特基势垒处的化学诱导电子空穴生成
- 专利标题： Chemical sensor using chemically induced electron-hole production at a Schottky barrier
- 专利标题（中）： 化学传感器使用肖特基势垒处的化学诱导电子空穴生成
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申请号： US11237443申请日： 2005-09-28
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公开(公告)号： US20060033121A1公开(公告)日： 2006-02-16
- 发明人: Eric McFarland , Henry Weinberg , Hermann Nienhaus , Howard Bergh , Brian Gergen , Arunava Mujumdar
- 申请人： Eric McFarland , Henry Weinberg , Hermann Nienhaus , Howard Bergh , Brian Gergen , Arunava Mujumdar
- 专利权人： Adrena,Inc.
- 当前专利权人： Adrena,Inc.
- 主分类号： H01L31/111
- IPC分类号： H01L31/111
摘要：
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
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