发明申请
- 专利标题： Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
- 专利标题（中）： 在铜金属化层中沉积阻挡层之前形成钝化层的技术
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申请号： US11112509申请日： 2005-04-22
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公开(公告)号： US20060024951A1公开(公告)日： 2006-02-02
- 发明人: Holger Schuehrer , Carsten Hartig , Christin Bartsch , Kai Frohberg
- 申请人： Holger Schuehrer , Carsten Hartig , Christin Bartsch , Kai Frohberg
- 优先权： DE102004037089.3 20040730
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.
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